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| 2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV) 2SJ610 Switching Regulator, DC-DC Converter and Motor Drive Applications Unit: mm * * * * Low drain-source ON resistance: RDS (ON) = 1.85 (typ.) High forward transfer admittance: |Yfs| = 18 S (typ.) Low leakage current: IDSS = -100 A (VDS = -250 V) Enhancement-mode: Vth = -1.5~-3.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Tc = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating -250 -250 20 -2.0 -4.0 20 180 -2.0 2.0 150 -55~150 A Unit V V V Pulse (t = 1 ms) (Note 1) JEDEC W mJ A mJ C C SC-64 2-7B1B Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEITA TOSHIBA Weight: 0.36 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit C/W C/W Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = -50 V, Tch = 25C (initial), L = 75 mH, IAR = -2.0 A, RG = 25 W Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. JEDEC JEITA TOSHIBA 2-7J1B Weight: 0.36 g (typ.) 1 2002-09-11 2SJ610 Electrical Characteristics (Tc = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) iYfsi Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -250 V, VGS = 0 V ID = -10 mA, VGS = 0 V VDS = -10 V, ID = -1 mA VGS = -10 V, ID = -1.0 A VDS = -10 V, ID = -1.0 A Min 3/4 3/4 -250 -1.5 3/4 0.5 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 1.85 1.8 381 52 157 5 Max 10 -100 3/4 -3.5 2.55 3/4 3/4 3/4 pF Unit mA mA V V W S 3/4 10 V ID = 1.0 A VOUT 3/4 3/4 3/4 ns 3/4 3/4 3/4 Turn-on time Switching time Fall time VGS 0V 20 50 9 RL = 100 W 6 3/4 3/4 3/4 3/4 3/4 nC Turn-off time Total gate charge Gate-source charge Gate-drain charge Duty < 1%, tw = 10 ms = VDD ~ 100 V 3/4 3/4 3/4 3/4 36 24 11 13 VDD ~ -200 V, VGS = -10 V, ID = -2.0 A Source-Drain Ratings and Characteristics (Tc = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition 3/4 3/4 IDR = -2.0 A, VGS = 0 V IDR = -2.0 A, VGS = 0 V, dIDR/dt = 100 A/ms Min 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 120 540 Max -2.0 -4.0 2.0 3/4 3/4 Unit A A V ns nC Marking Lot Number Type J610 Month (starting from alphabet A) Year (last number of the christian era) 2 2002-09-11 2SJ610 ID - VDS -2 Common source Tc = 25C, Pulse test -8 -6 -10 -15 -5.5 -5 -4.5 -4 Common source Tc = 25C, Pulse test -15 ID - VDS -6 -8 -10 -5 -2 -4.5 -1 VGS = -4 V -5.5 (A) ID Drain current -1 -0.5 VGS = -4 V Drain current ID 0 0 0 (A) -1.5 -3 0 -1 -2 -3 -4 -5 -10 -15 -20 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -4 Common source VDS = -10 V Pulse test -10 VDS - VGS Common source Tc = 25C Pulse test (V) VDS Drain-source voltage ID (A) -3 -8 -6 -2 Drain current -2 -4 -1 25 -2 ID = -1 A 100 0 0 -1 -2 -3 -4 Tc = -55C 0 0 -5 -6 -2 -4 -6 -8 -10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID 10 Common source VDS = -10 V 5 Pulse test Tc = -55C 100 10 Common source Tc = 25C 5 VGS = 10 V Pulse test 3 RDS (ON) - ID iYfsi (S) Forward transfer admittance 25 1 Drain-source on resistance RDS (ON) (W) -3 -5 -10 3 1 0.5 0.3 0.5 0.3 0.1 -0.1 -0.3 -0.5 -1 0.1 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 Drain current ID (A) Drain current ID (A) 3 2002-09-11 2SJ610 RDS (ON) - Tc (W) 5 Common source VGS = -10 V Pulse test -2 A 3 -100 Common source Tc = 25C Pulse test IDR - VDS RDS (ON) 4 Drain reverse current IDR (A) -10 ID = -1 A -1 Drain-source on resistance 2 1 VGS = -10 V -5 V -3 V 0.4 0.6 0, 1 0.8 1.0 1.2 1.4 0 -80 -40 0 40 80 120 160 0.1 0 0.2 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 1000 Ciss -5 Vth - Tc Common source VDS = -10 V ID = -1 mA Pulse test Gate threshold voltage Vth (V) -4 (pF) Coss 100 Crss Capacitance C -3 -2 10 -1 1 -0.1 Common source VGS = 0 V f = 1 MHz Tc = 25C -0.3 -1 -3 -10 -30 -100 0 -80 -40 0 40 80 120 160 Case temperature Tc (C) Drain-source voltage VDS (V) PD - Tc 40 -300 Dynamic input/output characteristics -30 Common source ID = -2 A Tc = 25C -200 VDS Pulse test -20 (W) (V) PD VDS Drain power dissipation Drain-source voltage 20 -15 -50 -100 -100 VGS VDD = -200 V -10 10 -5 0 0 40 80 120 160 200 0 0 5 15 25 35 -0 Case temperature Tc (C) Total gate charge Qg (nC) 4 2002-09-11 Gate-source voltage VGS 30 (V) -25 2SJ610 rth - tw 3 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 0.5 0.3 0.1 0.05 0.03 0.01 0.005 0.003 0.001 10 m Duty = 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse PDM t T Duty = t/T Rth (ch-c) = 6.25C/W 100 m 1m 10 m 100 m 1 10 100 Pulse width tw (S) Safe operating area -100 -50 -30 200 EAS - Tch (mJ) Avalanche energy EAS ID max (pulsed) * 1 ms * DC 100 ms * 160 -10 -5 -3 120 (A) 80 Drain current ID -1 -0.5 -0.3 40 0 25 50 75 100 125 150 -0.1 -0.0 * Single nonrepetitive pulse Tc = 25C -0.0 Curves must be derated linearly with increase in temperature. -0.0 1 VDSS max 3 5 10 30 50 100 300 500 1000 Channel temperature (initial) Tch (C) 15 V -15 V BVDSS IAR VDD VDS Drain-source voltage VDS (V) Test circuit RG = 25 W VDD = -50 V, L = 75 mH Wave form 5 2002-09-11 2SJ610 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-09-11 This datasheet has been download from: www..com Datasheets for electronics components. |
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